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Radiation-induced interface traps in hardened MOS transistors: an improved charge-pumping study

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6 Author(s)
Autran, J.L. ; CEA, Centre d''Etudes de Bruyeres-le-Chatel, France ; Chabrerie, C. ; Paillet, P. ; Flament, O.
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Different electrical characterization (subthreshold current-voltage measurements, 3-level and multi-frequency charge pumping) combined with isochronal anneals have been used to investigate the generation and the evolution of interface traps in radiation-hardened MOS transistors following exposure to 10 keV X-rays. The evolution of the interface state density (Dit) during the anneal is found to be field-dependent and consistent with models involving a drift of positive species towards the Si-SiO2 interface. The energy-resolved distributions of Dit in the silicon bandgap show the emergence of two broad structures located at ~E V+0.35 eV and ~EV+0.75 eV immediately after irradiation and during the first steps of the isochronal anneal (up to ~175°C). At higher anneal temperatures, it is shown that the recovery of Dit is not uniform in the two halves of the silicon bandgap. In particular, the separation of the Dit distribution related to the lower part of the bandgap in two distinct peaks (at EV+0.30 eV and EV+0.45 eV) agrees well with the energy distributions of Pb0 and Pb1 centers. These results are consistent with Electron Spin Resonance (ESR) studies which have shown that Pb centers play a dominating role in the interface trap build-up and recovery mechanisms. Since ESR measurements are only accurate to ~±30% in absolute number, Pb centers do not probably account for all the electrically active interface trap defects, as also suggested by the evident asymmetry of the Dit distributions in the bandgap. Finally, we investigate the post-irradiation response of border traps by reducing the charge pumping frequency to low values. The implication of these results on the nature of border traps is discussed

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Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 6 )