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Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 μm at room temperature

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5 Author(s)
A. N. Baranov ; Centre d'Electron. et de Micro-optoelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; Y. Cuminal ; G. Boissier ; C. Alibert
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Laser diodes emitting at 2.36 μm at room temperature have been fabricated from a type-II quantum-well heterostructure with an active region consisting of five Ga0.65In0.35As0.15 Sb0.85 wells and GaSb barriers. A pulsed threshold current density of 305 Å/cm2 has been obtained for an 820 μm-long-device at 23°C. The characteristic temperature T0 was found to be 55 K between -30 and 50°C. The differential quantum efficiency being 35% for 600 μm long lasers

Published in:

Electronics Letters  (Volume:32 ,  Issue: 24 )