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Browse Journals & Magazines > Electronics Letters ...> Volume:32 Issue:24 Help

High-power, highly-reliable operation of InGaAs/InGaAsP 0.98 μm lasers with an exponential-shaped flared stripe

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6 Author(s)
Sagawa, M. ; Central Res. Labs., Hitachi Ltd., Tokyo, Japan ; Hiramoto, K. ; Toyonaka, T. ; Kikawa, T.
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A 0.98 μm InGaAs/InGaAsP/GaAs strained quantum-well laser with an exponential-shaped-flared stripe has been developed. Its maximum output power is 40-60% higher than that of ordinary straight-stripe lasers for the same kink-occurrence output power. Testing at 150 mW showed stable operation with an estimated lifetime of >200000 h

Published in:
Electronics Letters  (Volume:32 ,  Issue: 24 )

Date of Publication: 21 Nov 1996

Page(s):
2277 - 2279
ISSN :
0013-5194
INSPEC Accession Number:
5452320
Digital Object Identifier :
10.1049/el:19961483
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
21 Nov 1996
Sponsored by :
Institution of Engineering and Technology

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