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0.15 μm T-shaped gate pseudomorphic HEMT fabricated using a new optical lithographic technique

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6 Author(s)
Byung-Sun Park ; Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Taejon, South Korea ; Jin-Hee Lee ; Hyung-Sup Yoon ; Yang, Jeon-Wook
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The authors propose a new optical lithographic technique to form a 0.15 μm length T-shaped gate. The lithographic technique is composed of PSM, low temperature PECVD of SiN, concurrent development and planarisation of the photoresist. By using this technique, a 0.15 μm AlGaAs-InGaAs-GaAs PHEMT was successfully fabricated, and with a transconductance of 498 mS mm and cutoff frequency of 62.4 GHz

Published in:

Electronics Letters  (Volume:32 ,  Issue: 24 )

Date of Publication:

21 Nov 1996

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