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Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

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6 Author(s)
C. -T. Chang ; Department of Materials Science and Engineering, National Chiao- Tung University, Hsinchu 300, Taiwan ; T. -H. Hsu ; E. Y. Chang ; Y. -C. Chen
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Normally-off operation AlGaN/GaN high electron mobility transistors have been developed utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1 V was achieved by using an 16 nm-thick Al2O3 gate oxide film. Additionally, the device performed a drain current density of 500 mA/mm and a peak transconductance of 100 mS/mm, which are comparable to the conventional normally-on devices.

Published in:

Electronics Letters  (Volume:46 ,  Issue: 18 )