By Topic

Failure Criterion Setting for the Wafer Level Isothermal Electromigration Test

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kun-Fu Chuang ; Dept. of Mater. Sci. & Engi neering, Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Hwang, J.

The lifetime prediction has been performed on the Al-Cu metal line using the wafer level isothermal electromigration test. A 8000-Å-thick Al-Cu (0.5%wt Cu) metal line of 800 mm long and 0.4 μmm wide is stacked with a 500 Å Ti/TiN bottom layer and a 400 Å Ti-TiN top layer. The resistance change ratio ΔR/Ri increases rapidly in the beginning (phase I), reaches a linear rate region (phase II), and finally abruptly increases (phase III). Self-heating, electromigration, and melting occur, respectively, in three phases I, II, and III. The (ΔR/Ri0) value can be extracted from the ΔR/Ri vs. stress time curve, which defines the ΔR/Ri value at the beginning of electromigration and is nearly at ~1% in our cases. The failure criterion is set at 1.2(ΔR/Ri)0 , which is an important value for lifetime prediction of the metal interconnect. The lifetime derived from the wafer level ISO-EM test is 2.9 times longer than that from the package level EM test.

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:24 ,  Issue: 1 )