By Topic

An analytical model for the photodetection mechanisms in high-electron mobility transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Romero, M.A. ; Dept. of Electr. Eng., Sao Paulo Univ., Brazil ; Martinez, M.A.G. ; Herczfeld, P.R.

The use of microwave high-electron mobility transistors (HEMTs) as photodetectors or optically controlled circuit elements have attracted interest. A model of the optical characteristics of HEMTs, which takes into account carrier transport as well as the quantum mechanical nature of the two-dimensional (2-D) electron gas channel, is presented. It is shown that the effect of illumination is equivalent to a shift in the gate to source bias voltage, referred to as the internal photovoltaic effect. The theoretical model is supported by experimental results that demonstrate that the HEMT photoresponse is a nonlinear function of light intensity with very high responsivity at low optical power levels

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:44 ,  Issue: 12 )