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6.3: Study on micro-fabrication processes of triode device structures using vertically aligned n-type doped amorphous Si nanowires arrays

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5 Author(s)
Zhou, B.P. ; State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China ; She, J.C. ; Deng, S.Z. ; Jun Chen
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Studies on micro-fabrication processes on integrating amorphous Si nanowires (a-SiNWs) arrays into a triode device structures were performed. Self-aligned technique was employed. Uniform a-SiNW array and gated a-SiNW triode device structure were obtained. The work provides a possibility for fabricating crosslink addressable arrays of a-SiNW triode devices on low cost and large area glass substrates.

Published in:

Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International

Date of Conference:

26-30 July 2010

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