Referenced Items are not available for this document.
Studies on micro-fabrication processes on integrating amorphous Si nanowires (a-SiNWs) arrays into a triode device structures were performed. Self-aligned technique was employed. Uniform a-SiNW array and gated a-SiNW triode device structure were obtained. The work provides a possibility for fabricating crosslink addressable arrays of a-SiNW triode devices on low cost and large area glass substrates.
Published in:
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Date of Conference: 26-30 July 2010
- Page(s):
- 100 - 101
- E-ISBN :
- 978-1-4244-7888-0
- Print ISBN:
- 978-1-4244-7889-7
- INSPEC Accession Number:
- 11520876
- Conference Location :
- Palo Alto, CA
- Digital Object Identifier :
- 10.1109/IVNC.2010.5563207
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