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P2–9: Vertically aligned carbon nanotube bundles with pronounced field emission

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5 Author(s)
Yilmazoglu, O. ; Dept. of High Freq. Electron., Tech. Univ. Darmstadt, Darmstadt, Germany ; Joshi, Ravi ; Popp, Alexander ; Pavlidis, D.
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Carbon nanotubes (CNTs) were grown by two different methods. The catalytic growth on a silicon wafer showed ultra high aspect ratios for the CNTs with extremely high field enhancement coefficients >25000 and a turn-on field of 0.36 V/μm, whereas the non-catalytic growth resulted in substrateless flexible CNT bundles with a simple gate electrode integration process. Results on an additional coating of the CNT emitter with ZnO with modified field-emission characteristics will be presented.

Published in:

Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International

Date of Conference:

26-30 July 2010