Cart (Loading....) | Create Account
Close category search window
 

P2–9: Vertically aligned carbon nanotube bundles with pronounced field emission

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yilmazoglu, O. ; Dept. of High Freq. Electron., Tech. Univ. Darmstadt, Darmstadt, Germany ; Joshi, Ravi ; Popp, Alexander ; Pavlidis, D.
more authors

Carbon nanotubes (CNTs) were grown by two different methods. The catalytic growth on a silicon wafer showed ultra high aspect ratios for the CNTs with extremely high field enhancement coefficients >25000 and a turn-on field of 0.36 V/μm, whereas the non-catalytic growth resulted in substrateless flexible CNT bundles with a simple gate electrode integration process. Results on an additional coating of the CNT emitter with ZnO with modified field-emission characteristics will be presented.

Published in:

Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International

Date of Conference:

26-30 July 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.