Referenced Items are not available for this document.
Carbon nanotubes (CNTs) were grown by two different methods. The catalytic growth on a silicon wafer showed ultra high aspect ratios for the CNTs with extremely high field enhancement coefficients >25000 and a turn-on field of 0.36 V/μm, whereas the non-catalytic growth resulted in substrateless flexible CNT bundles with a simple gate electrode integration process. Results on an additional coating of the CNT emitter with ZnO with modified field-emission characteristics will be presented.
Published in:
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Date of Conference: 26-30 July 2010
- Page(s):
- 139 - 140
- E-ISBN :
- 978-1-4244-7888-0
- Print ISBN:
- 978-1-4244-7889-7
- INSPEC Accession Number:
- 11518293
- Conference Location :
- Palo Alto, CA
- Digital Object Identifier :
- 10.1109/IVNC.2010.5563126
- Product Type:
- Conference Publications
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