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A novel nitrogen-doped SiOx resistive switching memory with low switching voltages

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10 Author(s)
Dejin Gao ; Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China ; Lijie Zhang ; Ru Huang ; Runsheng Wang
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In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed. The switching mechanism of the device was analyzed and can be explained by the formation and rupture of vacancy filaments.

Published in:

Silicon Nanoelectronics Workshop (SNW), 2010

Date of Conference:

13-14 June 2010

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