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Effect of oxide thickness on the low-frequency noise in MOSFET-based charge transfer devices

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3 Author(s)
Singh, V. ; Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan ; Inokawa, H. ; Satoh, H.

In this paper, current noise in the charge-transfer device fabricated by 65-nm bulk CMOS process, having different gate oxide thicknesses is reported both under direct current (DC) and charge transfer (CT) mode of operations. The interface trap density in these gate oxides were also estimated using charge pumping technique. Optimized gate oxide thickness for reduced noise power in the CT operation mode was obtained.

Published in:

Silicon Nanoelectronics Workshop (SNW), 2010

Date of Conference:

13-14 June 2010