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High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing

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3 Author(s)
Subrahmanyam, P.V.S. ; ITI Ltd., Bangalore, India ; Prabhakar, A. ; Vasi, J.

Highly reliable thin oxynitride layers of very good Si-SiO2 interface endurance were grown on silicon wafers with a split N 2O cycle (N2O/O2/N2O) employing rapid thermal processing (RTP). Excellent electrical characteristics with reduced positive charge generation, electron trapping and/or interface state generation were achieved under high field stressing compared to pure N2O dielectric

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Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 3 )