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Heat flow analysis for EOS/ESD protection device design in SOI technology

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3 Author(s)
P. Raha ; Illinois Univ., Urbana, IL, USA ; S. Ramaswamy ; E. Rosenbaum

Power-to-failure versus time-to-failure profiles for SOI protection devices are generated through a consideration of Joule heating. Experimental results are presented to justify assumptions made in the investigation of heat flow in SOI devices. A lossy transmission line equivalent model has been used to model the heat diffusion problem. A design space for multifinger NMOS protection devices has been developed on the basis of self-heating constraints. The method of images has been used to transform the multifinger device to an equivalent single-finger device to simplify the heat flow analysis

Published in:

IEEE Transactions on Electron Devices  (Volume:44 ,  Issue: 3 )