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Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's

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3 Author(s)
Richey, D.M. ; Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA ; Cressler, J.D. ; Joseph, A.J.

The SiGe heterostructure device simulation tool SCORPIO is used to investigate profile optimization in SiGe HBT's for high-performance analog circuit applications. After calibrating SCORPIO to measured data, the effects of germanium profile shape on current gain, cut-off frequency, Early voltage and maximum oscillation frequency are compared over the temperature range of 200-360 K. The impact of aggressive base profile scaling on device performance is also investigated as a function of SiGe film stability

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 3 )

Date of Publication:

Mar 1997

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