By Topic

Neutral base recombination and its influence on the temperature dependence of Early voltage and current gain-Early voltage product in UHV/CVD SiGe heterojunction bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
A. J. Joseph ; Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA ; J. D. Cressler ; D. M. Richey ; R. C. Jaeger
more authors

We present the first comprehensive investigation of neutral base recombination (NBR) in ultra-high vacuum/chemical vapor deposited (UHV/CVD) SiGe heterojunction bipolar transistors (HBT's), and its influence on the temperature characteristics of Early voltage (VA ) and current gain-Early voltage product (βVA). We show that a direct consequence of NBR in SiGe HBT's is the degradation of VA when transistors are operated with constant-current input (forced-IB) as opposed to a constant-voltage input (forced-VBE). In addition, experimental and theoretical evidence indicates that with cooling, VA in SiGe HBT's degrades faster than in Si bipolar junction transistors (BJT's) for forced-IB mode of operation. Under the forced-VBE mode of operation, however, SiGe HBT's exhibit a thermally-activated behavior for both VA and βVA, in agreement with the first-order theory. The differences in VA as a function of the input bias and temperature for SiGe HBT's are accurately modeled using a modified version of SPICE. The performance of various practical SiGe HBT circuits as a function of temperature, in the presence of NBR, is analyzed using this calibrated SPICE model

Published in:

IEEE Transactions on Electron Devices  (Volume:44 ,  Issue: 3 )