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Low-voltage operation GaAs spike-gate power FET with high power-added efficiency

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6 Author(s)
Tanaka, T. ; Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan ; Furukawa, H. ; Takenaka, H. ; Ueda, T.
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A GaAs power FET with a spike-gate has been developed for high-efficiency operation under extremely low supply voltage less than 1.5 V. The spike-gate provides both low on-resistance of 2.2 Ω/mm and high transconductance of 180 mS/mm without reducing the output impedance or increasing the gate resistance. The implemented device achieved an output power of 31.5 dBm with 70% power-added efficiency at a frequency of 900 MHz. It should be noted that the present device kept PAE of 60% even at a bias of 0.5 V, which is the lowest voltage ever attained

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 3 )

Date of Publication:

Mar 1997

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