Cart (Loading....) | Create Account
Close category search window
 

Low-voltage operation GaAs spike-gate power FET with high power-added efficiency

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Tanaka, T. ; Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan ; Furukawa, H. ; Takenaka, H. ; Ueda, T.
more authors

A GaAs power FET with a spike-gate has been developed for high-efficiency operation under extremely low supply voltage less than 1.5 V. The spike-gate provides both low on-resistance of 2.2 Ω/mm and high transconductance of 180 mS/mm without reducing the output impedance or increasing the gate resistance. The implemented device achieved an output power of 31.5 dBm with 70% power-added efficiency at a frequency of 900 MHz. It should be noted that the present device kept PAE of 60% even at a bias of 0.5 V, which is the lowest voltage ever attained

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 3 )

Date of Publication:

Mar 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.