Referenced Items are not available for this document.
We report on the first planar high-voltage MOSFET's in 6H-SiC. A double-implant MOS (DIMOS) process is used. The planar structure ameliorates the high-field stressing encountered by SiC UMOS transistors fabricated by other groups. Blocking mode operation of up to 760 V is demonstrated, which is nearly three times higher than previously reported operating voltages for SiC MOSFET's.
Published in:
Electron Device Letters, IEEE
(Volume:18
,
Issue:
3
)
Date of Publication: March 1997
- Page(s):
- 93 - 95
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5523059
- Digital Object Identifier :
- 10.1109/55.556091
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- March 1997
- Sponsored by :
- IEEE Electron Devices Society
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