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High-voltage double-implanted power MOSFET's in 6H-SiC

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3 Author(s)
Shenoy, Jayarama N. ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Cooper, J.A., Jr. ; Melloch, M.R.

We report on the first planar high-voltage MOSFET's in 6H-SiC. A double-implant MOS (DIMOS) process is used. The planar structure ameliorates the high-field stressing encountered by SiC UMOS transistors fabricated by other groups. Blocking mode operation of up to 760 V is demonstrated, which is nearly three times higher than previously reported operating voltages for SiC MOSFET's.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 3 )