Referenced Items are not available for this document.
Switching devices based on wide bandgap materials such as silicon carbide (SiC) offer a significant performance improvement on the switch level (specific on resistance, etc.) compared with Si devices. Well-known examples are SiC diodes employed, for example, in inverter drives with high switching frequencies. In this paper, the impact on the system-level performance, i.e., efficiency, power density, etc., of industrial inverter drives and of dc-dc converter resulting from the new SiC devices is evaluated based on analytical optimization procedures and prototype systems. There, normally on JFETs by SiCED and normally off JFETs by SemiSouth are considered.
Published in:
Industrial Electronics, IEEE Transactions on
(Volume:58
,
Issue:
7
)
Date of Publication: July 2011
- Page(s):
- 2872 - 2882
- ISSN :
- 0278-0046
- INSPEC Accession Number:
- 12049290
- Digital Object Identifier :
- 10.1109/TIE.2010.2072896
- Product Type:
- Journals & Magazines
- Date of Publication :
- 02 September 2010
- Date of Current Version :
- 13 June 2011
- Issue Date :
- July 2011
- Sponsored by :
- IEEE Industrial Electronics Society
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