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In this paper, we report the first result of a strained In0.52Ga0.48 As channel high-electron mobility transistor (HEMT) featuring highly doped In0.4Ga0.6 As source/drain (S/D) regions. A lattice mismatch of 0.9% between In0.52Ga0.48 As and In0.52Ga0.48 As S/D has resulted in a lateral strain in the In0.52Ga0.48 As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.