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A 1- \mu\hbox {W} 600- \hbox {p\pm}/^{\circ}\hbox {C} Current Reference Circuit Consisting of Subthreshold CMOS Circuits

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4 Author(s)
Ken Ueno ; Department of Electrical Engineering, Hokkaido University, Sapporo, Japan ; Tetsuya Hirose ; Tetsuya Asai ; Yoshihito Amemiya

A low-power CMOS current reference circuit was developed using a 0.35-μm standard CMOS process technology. The circuit consists of MOSFET circuits operating in the subthreshold region and uses no resistors. It compensates for the temperature effect on mobility μ and threshold voltage VTH of MOSFETs and generates a reference current that is insensitive to temperature and supply voltage. Theoretical analyses and experimental results showed that the circuit generates a stable reference current of 100 nA. The temperature coefficient of the current was 520 ppm/°C at best and 600 ppm/°C on average in the range of 0°C-80°C. The line regulation was 0.2%/V in a supply voltage range of 1.8-3 V. The power dissipation was 1 μW, and the chip area was 0.015 mm2. Our circuit would be suitable for use in subthreshold-operated power-aware large-scale integrations.

Published in:

IEEE Transactions on Circuits and Systems II: Express Briefs  (Volume:57 ,  Issue: 9 )