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Low-Frequency Noise Performance of a Bilayer InZnO–InGaZnO Thin-Film Transistor for Analog Device Applications

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7 Author(s)
Jeon, Sanghun ; Semicond. Device Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea ; Sun Il Kim ; Park, Sungho ; Song, Ihun
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In this letter, we present a comparative study of the low-frequency noise behavior of single-layer InGaZnO and bilayer InZnO-InGaZnO thin-film transistors (TFTs). The normalized noise for the bilayer oxide TFT is three times lower than that for the single-layer oxide TFT, mainly due to the higher mobility of the thin interfacial InZnO layer. The carrier number fluctuation is the dominant low-frequency noise mechanism in both devices. The use of a high-mobility bilayer oxide TFT with scaled gate length is still valid for reducing low-frequency noise.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 10 )