Referenced Items are not available for this document.
The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the Vth-controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SRAM operation with high cell stability.
Published in:
Electron Device Letters, IEEE
(Volume:31
,
Issue:
10
)
Date of Publication: Oct. 2010
- Page(s):
- 1095 - 1097
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 11534933
- Digital Object Identifier :
- 10.1109/LED.2010.2062483
- Product Type:
- Journals & Magazines
- Date of Publication :
- 02 September 2010
- Date of Current Version :
- 23 September 2010
- Issue Date :
- Oct. 2010
- Sponsored by :
- IEEE Electron Devices Society
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