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Gate-First \hbox {TaN/La}_{2}\hbox {O}_{3}/ \hbox {SiO}_{2}/\hbox {Ge} n-MOSFETs Using Laser Annealing

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4 Author(s)
Chen, W.B. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Wu, C.H. ; Shie, B.S. ; Chin, Albert

To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Ω/sq, a small ideality factor of 1.3, and a large ~105 forwardreverse current in the source-drain n+/p junction. The laser-annealed gate-first TaN/La2O3/SiO2/Ge n-MOSFETs showed a high mobility of 603 cm2/Vs and a good mobility of 304 cm2/Vs at a 1.9-nm equivalent oxide thickness.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 11 )