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Precise wavelength control of a multiple-wavelength DFB InGaAsP strained MQW laser-diode (LD) array was achieved using weighted-dose allocation variable-pitch EB-lithography (WAVE) and highly uniform MOVPE. Multiple-wavelength 1.3 /spl mu/m /spl lambda//4-shifted DFB LD arrays with wavelength spacing of 2.0 nm were successfully demonstrated. The standard deviation of the wavelength was as low as 0.37 nm over 2-in wafers.
Date of Publication: March 1997