Referenced Items are not available for this document.
We have fabricated the first room-temperature (RT) continuous-wave (CW) 0.85-/spl mu/m 8/spl times/8 bottom-emitting vertical-cavity surface-emitting AlGaAs-GaAs DBR QW laser diode (VCSEL) arrays on a p-type GaAs substrate, which are applicable to optical interconnection. The laser characteristics are slightly inferior to those of VCSEL arrays made on n-type GaAs substrate with the same reflectivity, but exhibit for better array uniformity of threshold current density than previously reported. Such devices are applicable to N-MOS integration.
Published in:
Photonics Technology Letters, IEEE
(Volume:9
,
Issue:
3
)
Date of Publication: March 1997
- Page(s):
- 280 - 281
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 5517542
- Digital Object Identifier :
- 10.1109/68.556046
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- March 1997
- Sponsored by :
- IEEE Photonics Society
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