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Power reduction schemes in next generation Intel® ATOM processor based sOc for handheld applications

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3 Author(s)
Rabiul Islam ; Intel Corporation, 1501 South Mopac Expressway, Austin, TX78746, USA ; Anil Sabbavarapu ; Rajesh Patel

Lincroft, the next generation Intel® ATOM processor based SoC specifically designed for smartphones, is fabricated in 45 nm Hi-K metal gate CMOS. As part of the extensive low power methodology, the chip is divided into numerous power domains with on die distributed powergates to reduce both active and standby power. Measured data shows upto 50X reduction in standby power. Silicon data shows dramatically low power in sleep and deeper sleep standby power states.

Published in:

2010 Symposium on VLSI Circuits

Date of Conference:

16-18 June 2010