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A Compact 0.1–14-GHz Ultra-Wideband Low-Noise Amplifier in 0.13- \mu{\hbox {m}} CMOS

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2 Author(s)
Po-Yu Chang ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Hsu, S.S.H.

A compact ultra-wideband low-noise amplifier (LNA) with a 12.4-dB maximum gain, a 2.7-dB minimum noise figure (NF), and a bandwidth over 0.1-14 GHz is realized in a 0.13-μm CMOS technology. The circuit is basically an inductorless configuration using the resistive-feedback and current-reuse techniques for wideband and high-gain characteristics. It was found that a small inductor of only 0.4 nH can greatly improve the circuit performance, which enhances the bandwidth by 23%, and reduces the NF by 0.94 dB (at 10.6 GHz), while only consuming an additional area of 80 × 80 μm2. The LNA only occupies a core area of 0.031 mm , and consumes 14.4 mW from a 1.8-V supply.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:58 ,  Issue: 10 )

Date of Publication:

Oct. 2010

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