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We have successfully fabricated the symmetric vertical-channel Ni-salicided polycrystalline silicon thin-film transistors (VSA-TFTs) for the first time. The transfer characteristics of VSA-TFTs show a sharp turning between subthreshold and on state. The off -state currents can be improved by a modified overetching of oxide, equivalent dual-gate structure, and n+ floating-region length. The on-state currents can be enhanced by Ni-salicidation. The VSA-TFTs display a good subthreshold swing of 220 mV/dec, steep mobility increase (field-effect mobility of 76 cm2/V·s), and large on/off-current ratio of more than 109 (IOFF = 4 × 10-14, ION = 7 × 10-5, and Wmask/Lmask = 10 μm/3 μm).