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Novel Symmetric Vertical-Channel Ni-Salicided Poly-Si Thin-Film Transistors With High on/off-Current Ratio

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5 Author(s)
Wu, Yi‐hong ; Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Po-Yi Kuo ; Yi-Hsien Lu ; Yi-Hsuan Chen
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We have successfully fabricated the symmetric vertical-channel Ni-salicided polycrystalline silicon thin-film transistors (VSA-TFTs) for the first time. The transfer characteristics of VSA-TFTs show a sharp turning between subthreshold and on state. The off -state currents can be improved by a modified overetching of oxide, equivalent dual-gate structure, and n+ floating-region length. The on-state currents can be enhanced by Ni-salicidation. The VSA-TFTs display a good subthreshold swing of 220 mV/dec, steep mobility increase (field-effect mobility of 76 cm2/V·s), and large on/off-current ratio of more than 109 (IOFF = 4 × 10-14, ION = 7 × 10-5, and Wmask/Lmask = 10 μm/3 μm).

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 11 )