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Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing

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4 Author(s)
Saurabh Saxena ; Advanced Display Research Center, Kyung Hee University, Seoul, Korea ; Dong Cheol Kim ; Jeang Hun Park ; Jin Jang

We report a high-performance thin-film transistor (TFT) using polycrystalline silicon (poly-Si) by short-pulse Flash-lamp annealing of amorphous silicon. Large grains of average size of ~15 μm with wide branchlike grain boundaries were found in the poly-Si, and there was no amorphous phase inside. The fabricated p-channel poly-Si TFT on the grain exhibited field-effect mobility of 138 cm2/V · sec, a threshold voltage of -1.3 V, and an on/off current ratio of 108.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 11 )