By Topic

Strain-dependent optical properties of mid-infrared GaInSb/GaInAlSb quantum well laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hasan, M.M. ; Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh ; Islam, M.R.

The optical properties of compressively strained GaInSb/GaInAlSb mid-infrared quantum well light sources are numerically studied solving one-dimensional Schrödinger equation using finite difference method. The simulation results demonstrate that band-mixing effects and effective mass of hole are reduced when the well is highly compressively strained. The strain-dependent optical and differential gains are evaluated for different values of strain and found maximum for 1.52% compressively strained quantum well. The emission wavelength for the proposed laser can be tuned from 2.39 μm to 2.27 μm due to change in compressive strain from 0.60% to 1.52%. The results obtained from PSPICE simulation, indicate that the optical output power and threshold current are strongly depend on the number of well and found to be almost constant for the number of well is three and above.

Published in:

Computer and Communication Engineering (ICCCE), 2010 International Conference on

Date of Conference:

11-12 May 2010