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Design of a low noise amplifier with GaAs MESFET at ku_Band

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4 Author(s)
Md. Rafiqul Islam ; Department of Electrical and Computer Engineering, Faculty of Engineering, International Islamic University Malaysia, P.O. Box: 10, 50728 Kuala Lumpur, Malaysia ; A. H. M. Zahirul Alam ; Sheroz Khan ; Arafat A. A Shabana

A Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316 mm2. The LNA is designed to operate at 12 GHz.

Published in:

Computer and Communication Engineering (ICCCE), 2010 International Conference on

Date of Conference:

11-12 May 2010