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A 0.13 \mu{\hbox {m}} SiGe BiCMOS Technology Featuring f _{T} /f _{\max } of 240/330 GHz and Gate Delays Below 3 ps

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22 Author(s)
Rucker, H. ; IHP, Frankfurt (Oder), Germany ; Heinemann, B. ; Winkler, W. ; Barth, R.
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A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies fT of 240 GHz, maximum oscillation frequencies fmax of 330 GHz, and breakdown voltages BVCEO of 1.7 V along with high-voltage HBTs (fT = 50 GHz,fmax = 130 GHz, BVCEO = 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.

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Solid-State Circuits, IEEE Journal of  (Volume:45 ,  Issue: 9 )