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Carrier Dynamics in Tunneling Injection Quantum Dot Lasers

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2 Author(s)
Gready, D. ; Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel ; Eisenstein, G.

We describe a detailed model for carrier dynamics in tunneling injection quantum dot lasers. The model includes the spatial dependence of the mobile carriers and the coupling between mobile carriers and confined carriers. The Poisson and Schrodinger equations are solved together, which enables consideration of band structure modification due to an electron-hole interaction. The model is solved both in steady state and for temporal perturbations. Steady-state carrier distributions and the band structure are presented, as well as large and small signal modulation responses.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:46 ,  Issue: 11 )

Date of Publication:

Nov. 2010

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