By Topic

Highly-scalable novel access device based on Mixed Ionic Electronic conduction (MIEC) materials for high density phase change memory (PCM) arrays

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

17 Author(s)
Gopalakrishnan, K. ; IBM Almaden Res. Center, San Jose, CA, USA ; Shenoy, R.S. ; Rettner, C.T. ; Virwani, K.
more authors

Phase change memory (PCM) could potentially achieve high density with large, 3Dstacked crosspoint arrays, but not without a BEOL-friendly access device (AD) that can provide high current densities and large ON/OFF ratios. We demonstrate a novel AD based on Cu-ion motion in novel Cu-containing Mixed Ionic Electronic Conduction (MIEC) materials[1, 2]. Experimental results on various device structures show that these ADs provide the ultra-high current densities needed for PCM, exhibit high ON/OFF ratios with excellent uniformity, are highly scalable, and are compatible with <;400°C Back-End-Of-the-Line (BEOL) fabrication.

Published in:

VLSI Technology (VLSIT), 2010 Symposium on

Date of Conference:

15-17 June 2010