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Browse Conference Publications > VLSI Technology (VLSIT), 2010 ... Help

Comprehensive study and control of oxygen vacancy induced effective work function modulation in gate-first high-k/metal inserted poly-Si stacks

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9 Author(s)
Hosoi, T. ; Grad. Sch. of Eng., Osaka Univ., Suita, Japan ; Saeki, M. ; Oku, Y. ; Arimura, H.
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We report the crucial impact of “Reductant Controlled MIPS (RC-MIPS) process” to obtain a sufficiently high effective work function (EWF) of poly-Si/TiN/HfSiON stacks in the gate-first process. It was found that carbon impurity, the strongest reductant element in the gate stack, dominates oxygen vacancy (Vo) formation kinetics and markedly enhances Fermi level pinning (FLP) phenomenon. We designed a high EWF gate-first RC-MIPS technology that uses both in situ metal/high-k fabrication and reduction suppressing processes, which leads to improved EOT-Jg characteristics and EWF stability.

Published in:
VLSI Technology (VLSIT), 2010 Symposium on

Date of Conference: 15-17 June 2010

Page(s):
179 - 180
E-ISBN :
978-1-4244-5450-1
Print ISBN:
978-1-4244-5451-8
INSPEC Accession Number:
11488298
Conference Location :
Honolulu
Digital Object Identifier :
10.1109/VLSIT.2010.5556218

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