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A 32nm low power RF CMOS SOC technology featuring high-k/metal gate

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34 Author(s)
Vandervoorn, P. ; Logic Technol. Dev. (Ltd.), Intel Corp., Hillsboro, OR, USA ; Agostinelli, M. ; Choi, S.-J. ; Curello, G.
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A 32nm RF SOC technology is developed with high-k/metal-gate triple-transistor architecture simultaneously offering devices with high performance and very low leakage to address advanced RF/mobile communications markets. A high performance NMOS achieves an fT of 420GHz. Concurrently, a low leakage 30pA/um NMOS achieves an fT of 218GHz. Deep-nwell/guard rings improves noise isolation by >50dB. High Q inductors, >7V breakdown voltage power amplifier transistors, varactors, and precision passives are also presented.

Published in:

VLSI Technology (VLSIT), 2010 Symposium on

Date of Conference:

15-17 June 2010

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