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A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device

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14 Author(s)
Hang-Ting Lue ; Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan ; Tzu-Hsuan Hsu ; Yi-Hsuan Hsiao ; Hong, S.P.
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An 8-layer, 75 nm half-pitch, 3D stacked vertical-gate (VG) TFT BE-SONOS NAND Flash array is fabricated and characterized. We propose a buried-channel (n-type well) device to improve the read current of TFT NAND, and it also allows the junction-free structure which is particularly important for 3D stackable devices. Large self-boosting disturb-free memory window (6V) can be obtained in our device, and for the first time the “Z-interference” between adjacent vertical layers is studied. The proposed buried-channel VG NAND allows better X, Y pitch scaling and is a very attractive candidate for ultra high-density 3D stackable NAND Flash.

Published in:

VLSI Technology (VLSIT), 2010 Symposium on

Date of Conference:

15-17 June 2010

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