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Application of a statistical compact model for Random Telegraph Noise to scaled-SRAM Vmin analysis

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9 Author(s)
Tanizawa, M. ; Renesas Technol. Corp., Itami, Japan ; Ohbayashi, S. ; Okagaki, T. ; Sonoda, K.
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A statistical compact RTN (Random Telegraph Noise) model with a fixed Vth shift and Vgs dependent trap time constants is proposed. It accurately reproduces the experimental observation of larger Vth fluctuation at higher |Vgs|. The model is also applied to analysis of SRAM Vmin fluctuation and finds out the distribution follows a log-normal statistics.

Published in:

VLSI Technology (VLSIT), 2010 Symposium on

Date of Conference:

15-17 June 2010