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A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications

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15 Author(s)
Wang, M. ; Dept. of Phys., Fudan Univ., Shanghai, China ; Luo, W.J. ; Wang, Y.L. ; Yang, L.M.
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A new CuxSiyO resistive memory, which is different from Cu-doped SiO2 or CuxO binary oxide, is integrated successfully in standard logic technology for the first time. Key breakthrough is that data retention (10 years@ 150°C), resistance distribution (with 50x window@125°C ) and disturbance immunity significantly improved with integration simplicity advantage, as demonstrated on a 1Mb test chip. The activation energy of Cu vacancy migration in CuxSiyO increases by 5 times than that in CuxO, giving rise to the great performance improvement. The solution is promising for both high density and low cost embedded nonvolatile memory (NVM) applications.

Published in:

VLSI Technology (VLSIT), 2010 Symposium on

Date of Conference:

15-17 June 2010