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Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

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14 Author(s)
Bangsaruntip, S. ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Majumdar, A. ; Cohen, G.M. ; Engelmann, S.U.
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We demonstrate the world's first top-down CMOS ring oscillators (ROs) fabricated with gate-all-around (GAA) silicon nanowire (NW) FETs having diameters as small as 3 nm. NW capacitance shows size dependence in good agreement with that of a cylindrical capacitor. AC characterization shows enhanced self-heating below 5 nm.

Published in:

VLSI Technology (VLSIT), 2010 Symposium on

Date of Conference:

15-17 June 2010