Skip to Main Content
We demonstrate the world's first top-down CMOS ring oscillators (ROs) fabricated with gate-all-around (GAA) silicon nanowire (NW) FETs having diameters as small as 3 nm. NW capacitance shows size dependence in good agreement with that of a cylindrical capacitor. AC characterization shows enhanced self-heating below 5 nm.
VLSI Technology (VLSIT), 2010 Symposium on
Date of Conference: 15-17 June 2010