Referenced Items are not available for this document.
We demonstrate the world's first top-down CMOS ring oscillators (ROs) fabricated with gate-all-around (GAA) silicon nanowire (NW) FETs having diameters as small as 3 nm. NW capacitance shows size dependence in good agreement with that of a cylindrical capacitor. AC characterization shows enhanced self-heating below 5 nm.
Published in:
VLSI Technology (VLSIT), 2010 Symposium on
Date of Conference: 15-17 June 2010
- Page(s):
- 21 - 22
- E-ISBN :
- 978-1-4244-5450-1
- Print ISBN:
- 978-1-4244-5451-8
- INSPEC Accession Number:
- 11488253
- Conference Location :
- Honolulu
- Digital Object Identifier :
- 10.1109/VLSIT.2010.5556136
- Product Type:
- Conference Publications
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