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For the first time, Multi-VT UTBOX-FDSOI technology for low power applications is demonstrated. We highlight the effectiveness of back biasing for short devices in order to achieve ION current improvement by 45% for LVT options at an IOFF current of 23nA/μm and a leakage reduction by 2 decades for the HVT one. In addition, fully functional 0.299um2 bitcells with 290mV SNM at 1.1V and Vb=0V operation were obtained. We also demonstrate on ring oscillators and 0.299μm2 SRAM bitcells the effectiveness (ΔVT versus Vb ~ 208mV/V) of the conventional bulk reverse and forward back biasing approaches to manage the circuit static power and the dynamic performances.