Cart (Loading....) | Create Account
Close category search window
 

Minimization of threshold voltage variation to AVT=1.3mVµm in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kato, S. ; Semicond. Leading Edge Technol. Inc. (Selete), Tsukuba, Japan ; Aoyama, T. ; Onizawa, T. ; Ikeda, K.
more authors

We have successfully suppressed threshold voltage variations due to pattern effect problems and random dopant fluctuation (RDF) using an integrated FSP-FLA technology. The serious problem of the pattern effect in FLA can be solved by using a light-absorber carbon film process, together with FSP-FLA. We estimated the temperature range in our test chip was within 10°C, being the same level obtained with spike RTA. In addition, the diffusion-less feature of FLA reduces the RDF of NMOS down to the same level as with PMOS. By applying several optimized processes, including a high-k/metal gate stack, we achieved AVT as 1.3mVμm for NMOS and 1.2mVμm for PMOS.

Published in:

VLSI Technology (VLSIT), 2010 Symposium on

Date of Conference:

15-17 June 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.