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High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique

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7 Author(s)
Isshiki, K. ; Mitsubishi Electr. Corp., Hyogo, Japan ; Kamizato, T. ; Takami, A. ; Shima, A.
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High-power and low-threshold-current GaAlAs lasers with a simple window structure fabricated by controllable open-tube two-step diffusion and single-step metalorganic chemical vapor deposition are discussed. The window structure and the waveguide with a narrow width around 2 μm are formed by diffusion of zinc, which just passes through an n-type active layer. CW output power up to 134 mW without catastrophic damage and a threshold current of 17 mA have been achieved. A maximum output power density of 16 MW/cm2 is estimated. A stable fundamental transverse mode of up to 100 mV in the wavelength range of 780 nm is obtained. Excellent uniformity of device characteristics is confirmed

Published in:

Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 5 )

Date of Publication:

May 1990

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