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High performance and low driving voltage amorphous InGaZnO thin-film transistors using high-к HfSiO dielectrics

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7 Author(s)
Hau-Yuan Huang ; Institute of Microelectronics, Dept. of Electr. Eng., National Cheng Kung Univ., Tainan, Taiwan ; Yen-Chieh Huang ; Je-Yi Su ; Nai-Chao Su
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Thin-film transistors were fabricated using amorphous indium gallium zinc oxide (α-IGZO) as channels and high-κ material HfSiO as gate dielectric by RF sputtering. The influence of high-κ PDA temperature variation on device characteristics was investigated. The bottom-gate low voltage driven (≤ 2 V) TFTs operated in n-type enhancement mode with a field-effect mobility of 12.7cm2/V-s, on-off current ratio of 3 × 105, threshold voltage of 0.005V, and subthreshold voltage swing of 0.11V/dec.

Published in:

Device Research Conference (DRC), 2010

Date of Conference:

21-23 June 2010