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In this work, without employing any IPL, excellent electrical performances for the Ge MOS devices, i.e. MOSCAPs and MOSFETs, have been demonstrated using ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] directly on Ge (100) with the incorporation of fluorine. The GGO/Ge interface is atomically abrupt with negligible Ge inter-diffusion and highly thermodynamically stable withstanding high temperature anneals as previously reported. We firstly fabricated the MOS devices with a thick GGO layer (~14nm) to carry out the charge pumping measurement for the extraction of convincing Dit's, along with the measurements on the MOSFET Furthermore, we examined the scalability of the GGO layer by reducing its thickness to ~3.5 nm with a thin Al2O3 cap for protection. Very good C-V characteristics and a GGO EOT of <; 1 nm have been achieved.