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Effects of InP barrier layer thicknesses and different ALD oxides on device performance of In0.7Ga0.3As MOSFETs

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8 Author(s)
Han Zhao ; Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA ; Ning Kong ; Yen-Ting Chen ; Wang, Yanzhen
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In this paper, InP barrier was used instead of InAlAs barrier due to its better interface quality with gate oxides. The effects of different InP barrier thicknesses on device performance were investigated. We have also deposited different ALD gate oxides (single Al2O3, HfO2 and Al2O3/HfO2 bilayer) and studied the influence of various oxides on oxide/barrier interface and device characteristics.

Published in:

Device Research Conference (DRC), 2010

Date of Conference:

21-23 June 2010

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