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An InGaAs-InP position-sensing photodetector

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5 Author(s)
Maigne, P. ; Nat. Res. Council, Ottawa, Ont., Canada ; Beraldin, J.A. ; Vanderwel, T.M. ; Buchanan, M.
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The design and fabrication of a position-sensing photodetector that is sensitive to a wavelength of 1.55 μm are reported. This device is based on the photo-lateral effect and uses an In0.53Ga0.47As absorbing layer that is lattice matched to an InP substrate. The output signal (I1- I2)/(I1+I2) varies linearly with respect to the position of the incident beam. The responsivity of 0.75 A/W is uniform over the length of the photodetector. The device is intended for video rate applications and has a -3-dB cutoff frequency of 7 MHz

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Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 5 )