By Topic

Low-voltage, high-mobility organic thin-film transistors with improved stability

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Zschieschang, U. ; Max Planck Inst. for Solid State Res., Stuttgart, Germany ; Yamamoto, T. ; Takimiya, K. ; Kuwabara, H.
more authors

This paper discusses organic thin-film transistors. Due to the performance degradation of pentacene based devices, this paper proposes a six-ring fused heteroarene, dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), which has a crystal structure and thin-film morphology similar to those of pentacene, but less susceptible to oxidation. This paper reports on the static and dynamic performance and on the stability of DNTT TFTs on flexible polyethylene naphthalate (PEN) substrates.

Published in:

Device Research Conference (DRC), 2010

Date of Conference:

21-23 June 2010