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DC and flicker noise models for passivated single-walled carbon nanotube transistors

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3 Author(s)
Lin Yu ; Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA ; Sunkook Kim ; Mohammadi, S.

DC and intrinsic low frequency noise properties of p-channel depletion-mode single-walled carbon nanotube field effect transistors (SWCNT-FETs) are investigated. To characterize the intrinsic noise properties a thin atomic layer deposited (ALD) HJO2 gate dielectric which also works as a passivation layer is used to isolate SWCNT-FETs from environmental factors.

Published in:

Device Research Conference (DRC), 2010

Date of Conference:

21-23 June 2010