By Topic

Adaptive Virtual Metrology applied to a CVD process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kevin Olson ; Micron Technology, 8000 S. Federal Way, PO Box 6, MS 1-499, Boise, ID 83707-0006 USA ; James Moyne

Micron Technology and Applied Materials engaged in a project to determine if Virtual Metrology (VM) is viable in a semiconductor manufacturing environment, focusing on six chambers of a CVD process with a target metrology parameter of thickness. An adaptive modeling process was utilized that related process fault detection data to metrology data. Results indicate that (1), VM models can be developed and used to improve productivity and reduce cost of the CVD process by providing data to support more intelligent strategies and possibly by supporting a move from lot level to wafer level run-to-run control, and (2) the adaptive component of the models makes the models robust to drift and shift in process characteristics. Model robustness could be improved by utilizing multiple adaptive techniques depending on the process dynamics.

Published in:

2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

Date of Conference:

11-13 July 2010